| PART |
Description |
Maker |
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| STH7NA100FI STW7NA100FI STW7NA100 5759 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
From old datasheet system
N-CHANNEL MOSFET
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率马鞍山晶体管
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
TE Connectivity, Ltd.
|
| STP60NE03L-10 5467 |
PC 26C 26#20 PIN RECP
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE] ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| ARF466FL APT466FL |
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE 200V 300W 45MHz
N-CHANNEL ENHANCEMENT MODE RF POWER MOSFETs
|
ADPOW[Advanced Power Technology]
|
| SSU50N10 SSU50N10-15 |
54A , 100V , RDS(ON) 22m N-Ch Enhancement Mode Power MOSFET
N-Ch Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| BUZ311 C67078-A3102-A2 |
SIPMOS Power Transistor (N channel Enhancement mode) SIPMOS功率晶体管（N通道增强模式
SIPMOS Power Transistor (N channel Enhancement mode)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| F2202S |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 1.6A I(D)
FET, Enhancement, ID 1.6 A
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER
|
Polyfet RF Devices
List of Unclassifed Manufacturers
|
| BSM101AR C67076-S1018-A2 BSM101 |
From old datasheet system
SIMOPAC Module (Power module Single switch N channel Enhancement mode) SIMOPAC模块（单开关电源模块N通道增强模式
SIMOPAC Module (Power module Single switch N channel Enhancement mode) 200 A, 50 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| APT5010B2FLL APT5010LFLL APT5010B2 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 500V 46A 0.100 Ohm
|
Advanced Power Technology, Ltd.
|
| NTMSD3P303R2 |
FETKY™ P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package
P−Channel Enhancement−Mode Power MOSFET and Schottky Diode Dual SO−8 Package
P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package(双P通道，增强模式，SO-8封装的功率MOSFET与肖特基二极
|
ON Semiconductor
|
